Samsung Electronics on Thursday said it had begun mass production of its second-generation three-dimensional (3D) V-NAND flash memory. The new memory is projected to be more cost-efficient that the previous-gen 3D V-NAND thanks to higher integration. The company also unveiled its new series of solid-state drives that are based on the new memory.
The second-generation V-NAND flash memory from Samsung stacks 32 multi-level cell (MLC) NAND storage layers in one chip package, up from 24 layers in the first-generation V-NAND from the company. Samsung did not reveal capacity of the new chips; the first-gen V-NAND chips provided 128Gb of storage space. Samsung continues to use its 42nm process technology for production of the 2nd-gen V-NAND.
Samsung indicated that the 32-layer 3D V-NAND requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND. According to the manufacturer, the second-gen 32-layer V-NAND is more “production efficient” and is made using “essentially the same” production equipment that was used for making the first gen V-NAND.
Full article: http://www.kitguru.net/components/memory/anton-shilov/samsung-begins-mass-production-of-32-layer-3d-v-nand-memory/
My personal reaction: